p4ka6.8 thru p4ka43a vishay general semiconductor document number: 88364 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 par ? transient voltage suppressors high temperature st ability and high relia bility conditions typical applications use in sensitive electronics protection against voltage transients induced by indu ctive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automo tive requirement ? available in uni-directional polarity only ? 400 w peak pulse power capability with a 10/1000 s waveform, repet itive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: do-204al, molded epoxy over passivated junction molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs comp liant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) all terms and symbols are consistent with ansi/ieee c62.35 primary characteristics v br 6.8 v to 43 v p ppm 400 w p d 1.5 w i fsm 40 a t j max. 185 c do-204al (do-41) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1) (fig. 1) p ppm 400 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on infi nite heatsink at t l = 75 c (fig. 5) p d 1.5 w peak forward surge current 8.3 ms single half sine-wave (2) i fsm 40 a maximum instantaneous forward voltage at 25 a v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
p4ka6.8 thru p4ka43a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88364 revision: 09-feb-11 2 notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fig. 3 and derated per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br (1) at i t (v) test current i t (ma) stand- off vol tag e v wm (v) maximum reverse leakage at v wm i d (a) t j = 150 c maximum reverse leakage at v wm i d (a) maximum. peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficient of v br (%/c) min. max. p4ka6.8 6.12 7.48 10 5.50 300 1000 37.0 10.8 0.057 p4ka6.8a 6.45 7.14 10 5.80 300 1000 38.1 10.5 0.057 p4ka7.5 6.75 8.25 10 6.05 150 500 34.2 11.7 0.060 p4ka7.5a 7.13 7.88 10 6.40 150 500 35.4 11.3 0.061 p4ka8.2 7.38 9.02 10 6.63 50 200 32.0 12.5 0.065 p4ka8.2a 7.79 8.61 10 7.02 50 200 33.1 12.1 0.065 p4ka9.1 8.19 10.0 1.0 7.37 10 50 29.0 13.8 0.068 p4ka9.1a 8.65 9.55 1.0 7.78 10 50 29.9 13.4 0.068 p4ka10 9.00 11.0 1.0 8.10 5.0 20 26.7 15.0 0.073 p4ka10a 9.50 10.5 1.0 8.55 5.0 20 27.6 14.5 0.073 p4ka11 9.90 12.1 1.0 8.92 1.0 5.0 24.7 16.2 0.075 p4ka11a 10.5 11.6 1.0 9.40 1.0 5.0 25.6 15.6 0.075 p4ka12 10.8 13.2 1.0 9.72 1.0 5.0 23.1 17.3 0.076 p4ka12a 11.4 12.6 1.0 10.2 1.0 5.0 24.0 16.7 0.078 p4ka13 11.7 14.3 1.0 10.5 1.0 5.0 21.1 19.0 0.081 p4ka13a 12.4 13.7 1.0 11.1 1.0 5.0 22.0 18.2 0.081 p4ka15 13.5 16.3 1.0 12.1 1.0 5.0 18.2 22.0 0.084 p4ka15a 14.3 15.8 1.0 12.8 1.0 5.0 18.9 21.2 0.084 p4ka16 14.4 17.6 1.0 12.9 1.0 5.0 17.0 23.5 0.086 p4ka16a 15.2 16.8 1.0 13.6 1.0 5.0 17.8 22.5 0.086 p4ka18 16.2 19.8 1.0 14.5 1.0 5.0 15.1 26.5 0.088 p4ka18a 17.1 18.9 1.0 15.3 1.0 5.0 15.9 25.5 0.088 p4ka20 18.0 22.0 1.0 16.2 1.0 5.0 13.7 29.1 0.090 p4ka20a 19.0 21.0 1.0 17.0 1.0 5.0 14.4 27.7 0.090 p4ka22 19.8 24.2 1.0 17.8 1.0 5.0 12.5 31.9 0.092 p4ka22a 20.9 23.1 1.0 18.8 1.0 5.0 13.1 30.6 0.092 p4ka24 21.6 26.4 1.0 19.4 1.0 5.0 11.5 34.2 0.094 p4ka24a 22.8 25.2 1.0 20.5 1.0 5.0 12.0 33.2 0.094 p4ka27 24.3 29.7 1.0 21.8 1.0 5.0 10.2 39.1 0.096 p4ka27a 25.7 28.4 1.0 23.1 1.0 5.0 10.7 37.5 0.096 p4ka30 27.0 33.0 1.0 24.3 1.0 5.0 9.2 43.5 0.097 p4ka30a 28.5 31.5 1.0 25.6 1.0 5.0 9.7 41.4 0.097 p4ka33 29.7 36.3 1.0 26.8 1.0 5.0 8.4 47.7 0.098 p4ka33a 31.4 34.7 1.0 28.2 1.0 5.0 8.8 45.7 0.098 p4ka36 32.4 39.6 1.0 29.1 1.0 5.0 7.7 52.0 0.099 p4ka36a 34.2 37.8 1.0 30.8 1.0 5.0 8.0 49.9 0.099 p4ka39 35.1 42.9 1.0 31.6 1.0 5.0 7.1 56.4 0.100 p4ka39a 37.1 41.0 1.0 33.3 1.0 5.0 7.4 53.9 0.100 p4ka43 38.7 47.3 1.0 34.8 1.0 5.0 6.5 61.9 0.101 p4ka43a 40.9 45.2 1.0 36.8 1.0 5.0 6.7 59.3 0.101
p4ka6.8 thru p4ka43a vishay general semiconductor document number: 88364 revision: 09-feb-11 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode p4ka6.8ahe3/54 (1) 0.336 54 5500 13" diameter paper tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 100 10 1 0.1 n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 0.1 1 10 100 1000 10 000 p ppm - peak p u lse p o w er (k w ) t d - p u lse w idth ( s) 100 75 50 25 0 0 25 50 75 100 125 150 175 200 peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage ( % ) t j - initial temperat u re (c) figure 3. pulse waveform figure 4. typical junction capacitance 0 1.0 2.0 3.0 4.0 0 50 100 150 t d t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 s w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 100 1000 10 000 100 000 1 10 100 meas u red at zero bias meas u red at stand-off v oltage v w m t j = 25 c f = 1.0 mhz v sig = 50 m v p-p c j - j u nction capacitance (pf) v br - breakdo w n v oltage ( v )
p4ka6.8 thru p4ka43a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 88364 revision: 09-feb-11 4 package outline dimensions in inches (millimeters) available in uni-directional only figure 5. power derating curve p d - po w er dissipation ( % ) t l - lead temperat u re (c) 60 hz resisti v e or ind u cti v e load 100 75 50 25 0 0 25 50 75 100 125 150 175 200 l = 0.375" (9.5 mm) lead lengths figure 6. maximum non-repetitive/peak forward surge current 1 10 100 10 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e do-204al (do-41) 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) 0.107 (2.7) 0.080 (2.0) dia. 0.026 (0.66) 0.023 (0.58) dia.
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